{"id":6592,"date":"2026-06-17T07:09:29","date_gmt":"2026-06-17T07:09:29","guid":{"rendered":"https:\/\/wiresawcutter.com\/?p=6592"},"modified":"2026-06-17T07:09:29","modified_gmt":"2026-06-17T07:09:29","slug":"diced-wafer-process","status":"publish","type":"post","link":"https:\/\/wiresawcutter.com\/de\/blog\/diced-wafer-process\/","title":{"rendered":"W\u00fcrfelwafer-Prozess erkl\u00e4rt: Vom geschnittenen Wafer zum Singulierten W\u00fcrfel"},"content":{"rendered":"
\n

By the Shanghai Donghe Science and Technology Co., Ltd. technical team \u00b7 Updated June 2026<\/p>\n

The diced wafer process<\/strong> is the back-end step where a finished semiconductor wafer is cut into hundreds or thousands of individual dies, each one a working chip ready for packaging. It’s also called die singulation, and it sits at the very end of the fab flow: an ingot is sliced into wafers, the wafers are patterned and thinned, and only then are they diced. This guide to wafer dicing walks the full sequence station by station, compares the four main dicing methods with real kerf and feed-rate numbers, and shows where most yield gets lost.<\/p>\n

\n

The diced wafer process separates a finished wafer into individual dies, almost always as the last operation before packaging. Engineers pick from four methods, blade, laser, plasma, and stealth dicing, that differ mainly in kerf width (from roughly 20-40 \u00b5m down to near-zero) and in how much they weaken the die. Method choice is driven by wafer thickness, material hardness, street-width budget, and the die break strength the package need.<\/p>\n<\/div>\n

\n

Quick Specs, Typical 200 mm Silicon Blade Dicing<\/h3>\n\n\n\n\n\n\n\n\n\n
Blade kerf (\u2248 blade width)<\/td>\n20-40 \u00b5m<\/td>\n<\/tr>\n
Spindle speed<\/td>\n15,000-30,000 rpm (up to 60,000)<\/td>\n<\/tr>\n
Feed rate<\/td>\n1-5 mm\/s (test) \u2192 25-75 mm\/s (production)<\/td>\n<\/tr>\n
Diamond grit size<\/td>\n2-4 \u00b5m (fine) to 6-8 \u00b5m (hard materials)<\/td>\n<\/tr>\n
Cut depth per pass<\/td>\n\u2264500 \u00b5m<\/td>\n<\/tr>\n
Dicing tape<\/td>\nUV-release (thin die) or blue\/non-UV (standard)<\/td>\n<\/tr>\n
Target die break strength<\/td>\n~500-1,000 MPa (silicon)<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Values vary by material, die size, and machine. Sources: University of Michigan LNF process wiki and published dicing studies (full source list at the end of this guide).<\/p>\n<\/div>\n

What Is the Diced Wafer Process? (Die Singulation Explained)<\/h2>\n

\"What<\/p>\n

Die singulation is the operation that turn one patterned wafer into many separate chips. After lithography and etching build the circuits, and after the wafer is thinned by back-grinding, the dies still sit in a single sheet of silicon connected by narrow blank lanes called streets (or scribe lines). Dicing cuts along those streets so each die can be picked and packaged.<\/p>\n

It helps to place dicing in the larger flow, because two cutting steps get confused. First, a wire saw slices the crystal ingot into raw wafers<\/a>that’s slicing. Much later, after the wafer is fully fabricated, dicing singulates it into dies. Slicing and dicing happen at opposite ends of the process and use different machines: the upstream slicing cut is handled by a silicon wafer cutting wire saw<\/a>, while dicing uses a dicing saw, laser, or plasma chamber.<\/p>\n

Remember the order this way:<\/p>\n